nandread

2019年3月30日—与nandread命令类似，将内存地址addr的size大小数据写入到flash的off偏移地址去，该命令会自动跳过坏块。,2017年9月30日—ReadDisturb并不会破坏Cell，重新擦除块和编程就会恢复正常的。读电压动态调节:上图是MLCFlashCell的Vth分布。“11”为擦除后的状态。Flash编程使用一 ...,2017年10月27日—Toreaddata,firstthedesiredgroupisselected(inthesamewaythatasingletransistorisselectedfromaNORarray).Next,mostof...

參考資訊如下
uboot 中Nand flash 常用操作命令解析原创

2019年3月30日 — 与nand read 命令类似，将内存地址addr的size大小数据写入到flash的off偏移地址去，该命令会自动跳过坏块。

Nand Flash学习笔记1

2017年9月30日 — Read Disturb并不会破坏Cell，重新擦除块和编程就会恢复正常的。 读电压动态调节: 上图是MLC Flash Cell的Vth分布。“11”为擦除后的状态。Flash编程使用一 ...

How does NAND reading work?

2017年10月27日 — To read data, first the desired group is selected (in the same way that a single transistor is selected from a NOR array). Next, most of the ...

Flash memory

The method used to read NAND flash memory can cause nearby cells in the same memory block to change over time (become programmed). This is known as read disturb ...

u

nand info Print information about all of the NAND devices found. nand read addr ofs|partition size Read `size' bytes from `ofs' in NAND flash to `addr'.

TN-2993

SNAP READ provides a faster read operation than PAGE READ to further improve NAND flash device output performance. This new operation provides flexibility ...

讀取干擾

快閃記憶體(NAND flash memory)是相當普及的儲存媒介，從小尺寸規格(small form ... 不過，隨著奈米製程的演進，記憶體單元越做越小，「讀取干擾」(Read Disturbance) ...

NAND Flash Media Management Algorithms

由 EF Haratsch 著作 · 被引用 7 次 — Reading from Flash: Hard Decision. Decoding. ▫ NAND Flash Memory compares read voltage with read reference voltage to generate hard decision. ▫ One reference ...

TN-29-01

The PAGE READ CACHE MODE command (31h) is used to transfer the page 0 data from the data register to the cache register and initiate a concurrent READ of the ...

NAND Flash ReadWrite Operations (Spring 2023)